
ClearFab Process Solutions provide sensitive real-time analysis of semiconductor process gases
Process gas analyzers for semiconductor R&D and production environments in etch, deposition and lithography processes
Process Gas Analysis with ClearFab Process Solutions
- Ready for diverse semiconductor applications Reactor health state (RHS) monitoring, end-point detection, plasma diagnostics and process optimization
- Fast and sensitive mass spectrometric monitoring TOF mass analyzer enables real-time monitoring all process species with isotopic mass resolution at sub-second refresh rates
- Large dynamic range Simultaneous detection of all precursors, byproducts and trace species in semiconductor processes
- Robust and mobile Rugged, flexible configuration allows precision in harsh environments and portability for non-invasive detection
- Long-term stability Accurate and reproducible response
- Powerful software Simple control interface with a fully documented API for system integration
- Background reduction with notch filter technology Attenuate specific abundant species to control mass spectral interferences
ClearFab Process Configurations and Specifications
ClearFab Process Gas Analyzers are available in three different configurations. Accessories can be selected to address specific fab applications.
Process Gas Analysis Option
Solution configuration best suited for the analysis and monitoring of neutral species present in semiconductor processes with ppm sensitivity and millisecond sampling rates.
Process Ion Analysis Option
Solution configuration for the analysis and monitoring of ionic and neutral species present in semiconductor processes with ppm sensitivity and millisecond sampling rates.
Process Ion Energy Analysis Option
Solution configuration for the simultaneous analysis of the ionic species, mass, and energy in semiconductor processes with better than 0.5 eV energy and 10 microseconds time resolution, ppm sensitivity, and millisecond sampling rates.
Accessories
- Multiport Valve for cluster applications or similar
- Inlet manifold allowing measurements at different process pressure ranges
Dynamic range and Limits of detections
- > 5 orders of magnitude of dynamic range
- Better than ppm sensitivity for most elements @ 1 kHz acquisition rate
System Specifications
Mass Resolving Power | From 800 to 8000 Th/Th |
Mass Range | 1000 Th |
Mass Accuracy | Down to 5 ppm |
Dynamic Range | > 105 |
Max Spectra Rate/TOF Extraction Rate | 1 kHz/> 30 kHz |
Corrosion Resistant | Yes |
- Monitoring and Characterization of Atomic Layer Deposition Processes with ClearFab Process Solutions PDF
- Real-Time Insight into Spontaneous and Plasma Enhanced Si Etching Processes with ClearFab Process Solutions PDF
Product Information
ClearFab Process Solution Publications
2022
- Hain et al. Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation. Surface and Coatings Technology, 2022. DOI: 10.1016/j.surfcoat.2022.129188
- Lapeyre et al. Influence of HiPIMS pulse widths on the deposition behaviour and properties of CuAgZr compositionally graded films. Surface and Coatings Technology, 2022. DOI: 10.1016/j.surfcoat.2022.129002
- Priebe et al. Real-Time In Situ Parallel Detection of Elements and Molecules with TOFMS during ALD for Chemical Quality Control of Thin Films. The Journal of Physical Chemistry, 2022. In Focus | DOI: 10.1021/acs.jpcc.1c09544
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